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BLA6G1011-200R
Power LDMOS transistor
Rev. 02 -- 1 March 2010 Preliminary data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz.
Table 1. Test information Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation pulsed class-AB f (MHz) 1030 to 1090 VDS (V) 28 PL (W) 200 Gp (dB) 20 D (%) 65 tr (ns) 10 tf (ns) 6
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
Typical pulsed RF performance at frequencies of 1030 MHz and 1090 MHz, a supply voltage of 28 V and an IDq of 100 mA: Output power = 200 W Power gain = 20 dB Efficiency = 65 % Easy power control Integrated ESD protection Enhanced ruggedness High efficiency Excellent thermal stability Designed for broadband operation (1030 MHz to 1090 MHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS)
1.3 Applications
Avionics transmitter applications in the 1030 MHz to 1090 MHz frequency range.
NXP Semiconductors
BLA6G1011-200R
Power LDMOS transistor
2. Pinning information
Table 2. Pin 1 2 3 Pinning Description drain gate source
[1]
Simplified outline
1 3 2
Graphic symbol
1
2 3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3. Ordering information Package Name Description BLA6G1011-200R flanged LDMOST ceramic package; 2 mounting holes; 2 leads Version SOT502A Type number
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min -0.5 -65 Max 65 +13 49 +150 225 Unit V V A C C
5. Thermal characteristics
Table 5. Zth(j-c) Thermal characteristics Conditions Tcase = 25 C; tp = 50 s; = 2 % Typ Unit transient thermal impedance from junction to case 0.085 K/W Symbol Parameter
BLA6G1011-200R_2
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Preliminary data sheet
Rev. 02 -- 1 March 2010
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NXP Semiconductors
BLA6G1011-200R
Power LDMOS transistor
6. Characteristics
Table 6. DC characteristics Tj = 25 C unless otherwise specified. Symbol Parameter V(BR)DSS drain-source breakdown voltage VGS(th) VGSq IDSS IDSX IGSS gfs RDS(on) Crs gate-source threshold voltage gate-source quiescent voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance feedback capacitance Conditions VGS = 0 V; ID = 0.9 mA VDS = 10 V; ID = 270 mA VDS = 28 V; ID = 1620 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 11 V; VDS = 0 V VDS = 10 V; ID = 9.45 A VGS = VGS(th) + 3.75 V; ID = 9.45 A VGS = 0 V; VDS = 28 V; f = 1 MHz Min 65 1.4 1.7 40 11 Typ 2.0 2.2 48 18 Max 2.4 2.7 4.2 420 26 Unit V V V A A nA S
0.012 0.07 3
0.093 pF
Table 7. RF characteristics Mode of operation: Pulsed RF; tp = 50 s; = 2 %; VDS = 28 V; IDq = 100 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit. Symbol PL Gp RLin D tr tf Parameter output power power gain input return loss drain efficiency rise time fall time PL = 200 W PL = 200 W PL = 200 W PL = 200 W PL = 200 W Conditions Min 200 18 8 58 Typ 20 10 65 10 6 Max 20 20 Unit W dB dB % ns ns
6.1 Ruggedness in class-AB operation
The BLA6G1011-200R is an enhanced rugged device and is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: tp = 50 s; = 2 %; VDS = 28 V; IDq = 100 mA; PL = 200 W; f = 1030 MHz to 1090 MHz.
BLA6G1011-200R_2
(c) NXP B.V. 2010. All rights reserved.
Preliminary data sheet
Rev. 02 -- 1 March 2010
3 of 11
NXP Semiconductors
BLA6G1011-200R
Power LDMOS transistor
7. Application information
7.1 Impedance information
Table 8. Typical impedance Typical values unless otherwise specified. f MHz 1030 1060 1090 ZS 0.57 - j0.94 0.70 - j1.13 0.80 - j1.53 ZL 0.80 - j0.68 0.84 - j0.52 0.86 - j0.35
drain ZL gate ZS
001aaf059
Fig 1.
Definition of transistor impedance
7.2 RF performance
250 PL (W) 200
001aak266
22 Gp (dB) 20
(1) (2) (3)
001aak267
150
(1) (2) (3)
18
100
16
50
14
0 0 1 2 3 Pi (W) 4
12 0 50 100 150 200 250 PL (W)
VDS = 28 V; tp = 50 s; = 2 %; IDq = 100 mA. (1) f = 1030 MHz (2) f = 1060 MHz (3) f = 1090 MHz
VDS = 28 V; tp = 50 s; = 2 %; IDq = 100 mA. (1) f = 1030 MHz (2) f = 1060 MHz (3) f = 1090 MHz
Fig 2.
Output power as a function of input power; typical values
Fig 3.
Power gain as a function of load power; typical values
BLA6G1011-200R_2
(c) NXP B.V. 2010. All rights reserved.
Preliminary data sheet
Rev. 02 -- 1 March 2010
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NXP Semiconductors
BLA6G1011-200R
Power LDMOS transistor
D (%)
70 60 50 40 30 20
(1) (2) (3)
001aak268
25 Gp RLin (dB) 20 Gp
001aak269
75 D (%) 70
15
D RLin
65
10
60
5 10 0 0 50 100 150 200 250 PL (W) 0 1020
55
1040
1060
1080 f (MHz)
50 1100
VDS = 28 V; tp = 50 s; = 2 %; IDq = 100 mA. (1) f = 1030 MHz (2) f = 1060 MHz (3) f = 1090 MHz
PL = 200 W; VDS = 28 V; tp = 50 s; = 2 %; IDq = 100 mA.
Fig 4.
Drain efficiency as a function of load power; typical values
Fig 5.
Power gain, input return loss and drain efficiency as function of frequency; typical values
7.3 Application circuit
C1
C2 R1
C5
C6
+ C7
C3 C4
C8
001aak270
See Table 9 for list of components.
Fig 6.
Component layout for class-AB application circuit
BLA6G1011-200R_2
(c) NXP B.V. 2010. All rights reserved.
Preliminary data sheet
Rev. 02 -- 1 March 2010
5 of 11
NXP Semiconductors
BLA6G1011-200R
Power LDMOS transistor
Table 9. List of components See Figure 6. Striplines are on a Rogers Duroid 6010 Printed-Circuit Board (PCB); r = 6.15 F/m; thickness = 0.64 mm Component C1, C6 C2 C3 C4 C5, C8 C7 R1
[1] [2]
Description
Value
[1] [1] [1] [2]
Remarks TDK
multilayer ceramic chip capacitor 10 F multilayer ceramic chip capacitor 68 pF multilayer ceramic chip capacitor 1.5 pF multilayer ceramic chip capacitor 3.9 pF multilayer ceramic chip capacitor 30 pF electrolytic capacitor SMD resistor 470 F; 63 V 12
1206
American Technical Ceramics type 100A or capacitor of same quality. American Technical Ceramics type 100B or capacitor of same quality.
BLA6G1011-200R_2
(c) NXP B.V. 2010. All rights reserved.
Preliminary data sheet
Rev. 02 -- 1 March 2010
6 of 11
NXP Semiconductors
BLA6G1011-200R
Power LDMOS transistor
8. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A
D
A
3
D1
F
U1 q C
B c
1
L
H
U2
p w1 M A M B M
E1
E
A
2
b w2 M C M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.43 0.186 0.135 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 p 3.38 3.12 Q 1.70 1.45 q 27.94 U1 34.16 33.91 1.345 1.335 U2 9.91 9.65 0.390 0.380 w1 0.25 0.01 w2 0.51 0.02
20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774
0.505 0.006 0.495 0.003
0.374 0.375 0.366 0.364
0.045 0.785 0.035 0.745
0.210 0.133 0.170 0.123
0.067 1.100 0.057
OUTLINE VERSION SOT502A
REFERENCES IEC JEDEC JEITA
EUROPEAN PROJECTION
ISSUE DATE 99-12-28 03-01-10
Fig 7.
Package outline SOT502A
(c) NXP B.V. 2010. All rights reserved.
BLA6G1011-200R_2
Preliminary data sheet
Rev. 02 -- 1 March 2010
7 of 11
NXP Semiconductors
BLA6G1011-200R
Power LDMOS transistor
9. Abbreviations
Table 10. Acronym CW LDMOS LDMOST RF SMD VSWR Abbreviations Description Continuous Wave Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Radio Frequency Surface Mounted Device Voltage Standing-Wave Ratio
10. Revision history
Table 11. Revision history Release date 20100301 Data sheet status Preliminary data sheet Objective data sheet Change notice Supersedes BLA6G1011-200R_1 Document ID BLA6G1011-200R_2 Modifications: BLA6G1011-200R_1
*
The status of this document has been changed to "Preliminary data sheet".
20090617
BLA6G1011-200R_2
(c) NXP B.V. 2010. All rights reserved.
Preliminary data sheet
Rev. 02 -- 1 March 2010
8 of 11
NXP Semiconductors
BLA6G1011-200R
Power LDMOS transistor
11. Legal information
11.1 Data sheet status
Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
11.2
Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification -- The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.
malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer's third party customer(s) (hereinafter both referred to as "Application"). It is customer's sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer's general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Non-automotive qualified products -- Unless the data sheet of an NXP Semiconductors product expressly states that the product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors' warranty of the
(c) NXP B.V. 2010. All rights reserved.
11.3
Disclaimers
Limited warranty and liability -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors' aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or
BLA6G1011-200R_2
Preliminary data sheet
Rev. 02 -- 1 March 2010
9 of 11
NXP Semiconductors
BLA6G1011-200R
Power LDMOS transistor
product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors' specifications such use shall be solely at customer's own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors' standard warranty and NXP Semiconductors' product specifications.
11.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
BLA6G1011-200R_2
(c) NXP B.V. 2010. All rights reserved.
Preliminary data sheet
Rev. 02 -- 1 March 2010
10 of 11
NXP Semiconductors
BLA6G1011-200R
Power LDMOS transistor
13. Contents
1 1.1 1.2 1.3 2 3 4 5 6 6.1 7 7.1 7.2 7.3 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 4 Impedance information . . . . . . . . . . . . . . . . . . . 4 RF performance . . . . . . . . . . . . . . . . . . . . . . . . 4 Application circuit . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 1 March 2010 Document identifier: BLA6G1011-200R_2

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